march 2012 fcp190n60e / fcpf190 n60e n-channel mosfet ?2012 fairchild semiconductor corporation fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 1 superfet ? ii mosfet maximum ratings t c = 25 o c unless otherwise noted *drain current limited by maximum junction temperature thermal characteristics symbol parameter fcp190n60e FCPF190N60E units v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1hz) 30 v i d drain current -continuous (t c = 25 o c) 20.6 20.6* a -continuous (t c = 100 o c) 13.1 13.1* i dm drain current - pulsed (note 1) 61.8 61.8* a e as single pulsed avalanche energy (note 2) 400 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 2.1 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt 100 p d power dissipation (t c = 25 o c) 208 39 w - derate above 25 o c 1.67 0.31 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fcp190n60e FCPF190N60E units r jc thermal resistance, junction to case 0.6 3.2 o c/w r cs thermal resistance, case to heat sink (typical) 0.5 0.5 r ja thermal resistance, junction to ambient 62.5 62.5 fcp190n60e / FCPF190N60E 600v n-channel mosfet features ? 650v @t j = 150c ?max. r ds(on) = 190m ? ultra low gate charge (typ. q g = 63nc) ? low effective output capacitance (typ. c oss .eff = 178pf) ? 100% avalanche tested description superfet ? ii is, fairchild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superio r switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet ? ii is very suitable for various ac/dc power conversion in switching mode operation for system miniaturization and higher efficiency. g s d to-220f g s d to-220 g d s
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fcp190n60e fcp190n60e to-220 - - 50 FCPF190N60E FCPF190N60E to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage v gs = 0v, i d = 10ma, t j = 25 c 600 - - v v gs = 0v, i d = 10ma, t j = 150 c 650 - - v bv dss t j breakdown voltage temperature coefficient i d = 10ma, referenced to 25 o c - 0.67 - v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 20a - 700 - v i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 1 a v ds = 480v, t c = 125 o c--10 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 10a - 0.16 0.19 g fs forward transconductance v ds = 20v, i d = 10a -20-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2385 3175 pf c oss output capacitance - 1795 2396 pf c rss reverse transfer capacitance - 110 165 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1.0mhz - 42 - pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 178 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 10a v gs = 10v (note 4) -6382nc q gs gate to source gate charge - 10 - nc q gd gate to drain ?miller? charge - 24 - nc esr equivalent series resistance drain open - 5 - t d(on) turn-on delay time v dd = 380v, i d = 10a v gs = 10v, r g = 4.7 (note 4) -2356ns t r turn-on rise time - 14 38 ns t d(off) turn-off delay time - 101 212 ns t f turn-off fall time - 15 40 ns i s maximum continuous drain to source diode forward current - - 20.6 a i sm maximum pulsed drain to source diode forward current - - 61.8 a v sd drain to source diode forward voltage v gs = 0v, i sd = 10a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 10a di f /dt = 100a/ s - 308 - ns q rr reverse recovery charge - 4.8 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 4a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 10a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.3 1 10 50 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 2345678 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 102030405060 0.1 0.2 0.3 0.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 0.5 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 1428425670 0 2 4 6 8 10 *note: i d = 10a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area vs. case temperature - fcp190n60e vs. case temperature - FCPF190N60E figure 11. maximum drain current figure 12. eoss vs. drain to source voltage switching capabili ty -80 -40 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 10a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c] 0 100 200 300 400 500 600 0 2 4 6 8 10 e oss , [ j] v ds , drain to source voltage [v]
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13. transient thermal response curve - fcp190n60e figure 14. transient thermal response curve - FCPF190N60E 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 8 mechanical dimensions to-220ab
fcp190n60e / fcpf190 n60e n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 9 package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2500v
fcp190n60e / FCPF190N60E n-channel mosfet fcp190n60e / FCPF190N60E rev. c4 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system genera l corporation, used under licens e by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairch ild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any comp onent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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